Wideband THz HEB mixers using HPCVD MgB2 thin films
Paper in proceeding, 2016
We present results of experimental study of the gain bandwidth (GBW) of MgB2 hot electron-bolometer (HEB) mixers at 0.1THz and 0.4THz. Antenna integrated 0.25-1.5um2 area devices were made from thin MgB2 films deposited with a custom made HPCVD system. Film as thin as 15-45nm had a Tc from 35K to 40K. The GBW was found to be independent on the bias conditions, the bath temperature, and the LO frequency. The maximum GBW of 6GHz was observed for 15nm thick HEBs. At an 0.7THz LO and a 23K bath temperature the receiver noise temperature of this mixer was 3000K (corrected for optical losses).
Author
Evgenii Novoselov
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Naichuan M. Zhang
Chalmers, Microtechnology and Nanoscience (MC2)
Serguei Cherednichenko
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
21622027 (ISSN) 21622035 (eISSN)
Vol. 2016-November Arti no 7758933- 7758933978-1-4673-8485-8 (ISBN)
Infrastructure
Kollberg Laboratory
Nanofabrication Laboratory
Areas of Advance
Nanoscience and Nanotechnology
Materials Science
Subject Categories
Other Earth and Related Environmental Sciences
Other Materials Engineering
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/IRMMW-THz.2016.7758933
ISBN
978-1-4673-8485-8