Wideband THz HEB mixers using HPCVD MgB2 thin films
Paper in proceedings, 2016

We present results of experimental study of the gain bandwidth (GBW) of MgB2 hot electron-bolometer (HEB) mixers at 0.1THz and 0.4THz. Antenna integrated 0.25-1.5um2 area devices were made from thin MgB2 films deposited with a custom made HPCVD system. Film as thin as 15-45nm had a Tc from 35K to 40K. The GBW was found to be independent on the bias conditions, the bath temperature, and the LO frequency. The maximum GBW of 6GHz was observed for 15nm thick HEBs. At an 0.7THz LO and a 23K bath temperature the receiver noise temperature of this mixer was 3000K (corrected for optical losses).

Author

Evgenii Novoselov

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Naichuan M. Zhang

Chalmers, Microtechnology and Nanoscience (MC2)

Serguei Cherednichenko

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

21622027 (ISSN) 21622035 (eISSN)

Vol. 2016-November Arti no 7758933- 7758933

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Other Earth and Related Environmental Sciences

Other Materials Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/IRMMW-THz.2016.7758933

ISBN

978-1-4673-8485-8

More information

Created

10/7/2017