Wideband THz HEB mixers using HPCVD MgB2 thin films
Paper i proceeding, 2016

We present results of experimental study of the gain bandwidth (GBW) of MgB2 hot electron-bolometer (HEB) mixers at 0.1THz and 0.4THz. Antenna integrated 0.25-1.5um2 area devices were made from thin MgB2 films deposited with a custom made HPCVD system. Film as thin as 15-45nm had a Tc from 35K to 40K. The GBW was found to be independent on the bias conditions, the bath temperature, and the LO frequency. The maximum GBW of 6GHz was observed for 15nm thick HEBs. At an 0.7THz LO and a 23K bath temperature the receiver noise temperature of this mixer was 3000K (corrected for optical losses).

Författare

Evgenii Novoselov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Naichuan M. Zhang

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Serguei Cherednichenko

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

21622027 (ISSN) 21622035 (eISSN)

Vol. 2016-November Arti no 7758933- 7758933

Infrastruktur

Kollberglaboratoriet

Nanotekniklaboratoriet

Styrkeområden

Nanovetenskap och nanoteknik

Materialvetenskap

Ämneskategorier

Annan geovetenskap och miljövetenskap

Annan materialteknik

Annan elektroteknik och elektronik

DOI

10.1109/IRMMW-THz.2016.7758933

ISBN

978-1-4673-8485-8

Mer information

Skapat

2017-10-07