An XPS method for layer profiling of NbN thin films
Paper in proceedings, 2017

Layer chemical and phase profiling of niobium nitride thin films on a silicon substrate oxidized on air was performed with the help of a method designed by us. The method includes: a new method of background subtraction of multiple inelastically scattered photoelectrons considering depth inhomogeneity of electron inelastic scattering; a new method of photoelectron line decomposition into component peaks considering physical nature of different decomposition parameters; joint solution of the background subtraction and photoelectron line decomposition problems; control of line decomposition accuracy with the help of a suggested performance criterion; calculation of layer thicknesses for a multilayer target using a simple formula.

Author

Alexander Lubenchenko

National Research University Moscow Power Engineering Institute

A Batrakov

National Research University Moscow Power Engineering Institute

Alexey Pavolotskiy

Chalmers, Earth and Space Sciences, Advanced Receiver Development

Sascha Krause

Chalmers, Earth and Space Sciences, Advanced Receiver Development

I. V. Shurkaeva

National Research University Moscow Power Engineering Institute

Olga Lubenchenko

National Research University Moscow Power Engineering Institute

Dmitriy Ivanov

National Research University Moscow Power Engineering Institute

EPJ Web of Conferences

21016275 (ISSN) 2100014X (eISSN)

Vol. 132 Art no 03053- 03053

Subject Categories

Aerospace Engineering

Infrastructure

Onsala Space Observatory

DOI

10.1051/epjconf/201713203053

More information

Created

10/8/2017