An XPS method for layer profiling of NbN thin films
Paper i proceeding, 2017

Layer chemical and phase profiling of niobium nitride thin films on a silicon substrate oxidized on air was performed with the help of a method designed by us. The method includes: a new method of background subtraction of multiple inelastically scattered photoelectrons considering depth inhomogeneity of electron inelastic scattering; a new method of photoelectron line decomposition into component peaks considering physical nature of different decomposition parameters; joint solution of the background subtraction and photoelectron line decomposition problems; control of line decomposition accuracy with the help of a suggested performance criterion; calculation of layer thicknesses for a multilayer target using a simple formula.

Författare

Alexander Lubenchenko

National Research University Moscow Power Engineering Institute

A Batrakov

National Research University Moscow Power Engineering Institute

Alexey Pavolotskiy

Chalmers, Rymd- och geovetenskap, Avancerad mottagarutveckling

Sascha Krause

Chalmers, Rymd- och geovetenskap, Avancerad mottagarutveckling

I. V. Shurkaeva

National Research University Moscow Power Engineering Institute

Olga Lubenchenko

National Research University Moscow Power Engineering Institute

Dmitriy Ivanov

National Research University Moscow Power Engineering Institute

EPJ Web of Conferences

21016275 (ISSN) 2100014X (eISSN)

Vol. 132 Art no 03053- 03053

Ämneskategorier

Rymd- och flygteknik

Infrastruktur

Onsala rymdobservatorium

DOI

10.1051/epjconf/201713203053