Unintentional writing of a FAMOS memory device during reading

Journal article, 1976

A FAMOS cell may be unintentionally written during repeated reading. The temperature dependence of this failure process was studied and it is shown that the worst case for unintentional charging of a FAMOS device occurs at low temperatures. This is qualitatively explained by a simple model including the temperature dependence of preavalanche carrier multiplication and hot electron injection.