Unintentional writing of a FAMOS memory device during reading
Artikel i vetenskaplig tidskrift, 1976

A FAMOS cell may be unintentionally written during repeated reading. The temperature dependence of this failure process was studied and it is shown that the worst case for unintentional charging of a FAMOS device occurs at low temperatures. This is qualitatively explained by a simple model including the temperature dependence of preavalanche carrier multiplication and hot electron injection.

Författare

Kjell Jeppson

Institutionen för mikroelektronik och nanovetenskap

Institutionen för elektronfysik III - Fasta tillståndets elektronfysik

Christer Svensson

Institutionen för elektronfysik III - Fasta tillståndets elektronfysik

Solid-State Electronics

0038-1101 (ISSN)

Vol. 19 455-457

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1016/0038-1101(76)90006-X