Unintentional writing of a FAMOS memory device during reading
Artikel i vetenskaplig tidskrift, 1976
A FAMOS cell may be unintentionally written during repeated reading. The temperature dependence of this failure process was studied and it is shown that the worst case for unintentional charging of a FAMOS device occurs at low temperatures. This is qualitatively explained by a simple model including the temperature dependence of preavalanche carrier multiplication and hot electron injection.
Författare
Kjell Jeppson
Institutionen för mikroelektronik och nanovetenskap
Institutionen för elektronfysik III - Fasta tillståndets elektronfysik
Christer Svensson
Institutionen för elektronfysik III - Fasta tillståndets elektronfysik
Solid-State Electronics
0038-1101 (ISSN)
Vol. 19 6 455-457Ämneskategorier
Elektroteknik och elektronik
DOI
10.1016/0038-1101(76)90006-X