Extraction of series-resistance-independent MOS transistor model parameters
Journal article, 1992
It is shown by simulations and experiments how series-resistance-independent intrinsic SPICE level-3 MOS parameters can be extracted when the source and drain series resistance is extracted as a separate parameter. If this resistance is not extracted separately, not only will the mobility reduction factor depend on the series resistance but so will the maximum drift velocity, the saturation field factor, and the static feedback factor. External source and drain resistors have been used to investigate how these parameters depend on the series resistance.
MOSFETs
SPICE
Solid state circuits
Circuit simulation
Resistors
Feedback
Transistors
Threshold voltage
Data mining
Electron mobility
Author
Peter R. Karlsson
Department of Solid State Electronics
Kjell Jeppson
Department of Solid State Electronics
Department of Microelectronics and Nanoscience
IEEE Electron Device Letters
0741-3106 (ISSN) 15580563 (eISSN)
Vol. 13 11 581-583Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/55.192846