Extraction of series-resistance-independent MOS transistor model parameters
Artikel i vetenskaplig tidskrift, 1992

It is shown by simulations and experiments how series-resistance-independent intrinsic SPICE level-3 MOS parameters can be extracted when the source and drain series resistance is extracted as a separate parameter. If this resistance is not extracted separately, not only will the mobility reduction factor depend on the series resistance but so will the maximum drift velocity, the saturation field factor, and the static feedback factor. External source and drain resistors have been used to investigate how these parameters depend on the series resistance.

Circuit simulation

Data mining



Electron mobility

Threshold voltage


Solid state circuits




Peter R. Karlsson

Institutionen för fasta tillståndets elektronik

Kjell Jeppson

Institutionen för mikroelektronik och nanovetenskap

Institutionen för fasta tillståndets elektronik

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 13 11 581-583


Elektroteknik och elektronik