Extraction of series-resistance-independent MOS transistor model parameters
Artikel i vetenskaplig tidskrift, 1992

It is shown by simulations and experiments how series-resistance-independent intrinsic SPICE level-3 MOS parameters can be extracted when the source and drain series resistance is extracted as a separate parameter. If this resistance is not extracted separately, not only will the mobility reduction factor depend on the series resistance but so will the maximum drift velocity, the saturation field factor, and the static feedback factor. External source and drain resistors have been used to investigate how these parameters depend on the series resistance.

MOSFETs

SPICE

Solid state circuits

Circuit simulation

Resistors

Feedback

Transistors

Threshold voltage

Data mining

Electron mobility

Författare

Peter R. Karlsson

Institutionen för fasta tillståndets elektronik

Kjell Jeppson

Institutionen för fasta tillståndets elektronik

Institutionen för mikroelektronik och nanovetenskap

IEEE Electron Device Letters

0741-3106 (ISSN) 15580563 (eISSN)

Vol. 13 11 581-583

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/55.192846

Mer information

Senast uppdaterat

2023-02-04