Extraction of series-resistance-independent MOS transistor model parameters
Artikel i vetenskaplig tidskrift, 1992
It is shown by simulations and experiments how series-resistance-independent intrinsic SPICE level-3 MOS parameters can be extracted when the source and drain series resistance is extracted as a separate parameter. If this resistance is not extracted separately, not only will the mobility reduction factor depend on the series resistance but so will the maximum drift velocity, the saturation field factor, and the static feedback factor. External source and drain resistors have been used to investigate how these parameters depend on the series resistance.
MOSFETs
SPICE
Solid state circuits
Circuit simulation
Resistors
Feedback
Transistors
Threshold voltage
Data mining
Electron mobility
Författare
Peter R. Karlsson
Institutionen för fasta tillståndets elektronik
Kjell Jeppson
Institutionen för fasta tillståndets elektronik
Institutionen för mikroelektronik och nanovetenskap
IEEE Electron Device Letters
0741-3106 (ISSN) 15580563 (eISSN)
Vol. 13 11 581-583Ämneskategorier
Elektroteknik och elektronik
DOI
10.1109/55.192846