A fast method of parameter extraction for MOS transistors
Paper in proceeding, 1990
A fast method of parameter extraction using a limited number of data points is developed for the SPICE level 3 MOS transistor model. Analytical expressions or numerical equations that converge fast are used to calculate the parameters and all interactions between parameters are taken into account. Proper selection of data points ensures physically reasonable values for most extracted parameters.
Parameter extraction
SPICE
Threshold voltage
Solid modeling
Differential equations
Data mining
Algorithm design and analysis
Intrusion detection
MOSFETs
Transistors
Author
Peter R. Karlsson
Department of Solid State Electronics
Kjell Jeppson
Department of Microelectronics and Nanoscience
Department of Solid State Electronics
European Solid State Device Research Conference ESSDERC
Vol. 1990 10-13 Sept. 1990
0-7503-0065-5 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
ISBN
0-7503-0065-5