A fast method of parameter extraction for MOS transistors
Paper i proceeding, 1990
A fast method of parameter extraction using a limited number of data points is developed for the SPICE level 3 MOS transistor model. Analytical expressions or numerical equations that converge fast are used to calculate the parameters and all interactions between parameters are taken into account. Proper selection of data points ensures physically reasonable values for most extracted parameters.
Parameter extraction
SPICE
Threshold voltage
Solid modeling
Differential equations
Data mining
Algorithm design and analysis
Intrusion detection
MOSFETs
Transistors
Författare
Peter R. Karlsson
Institutionen för fasta tillståndets elektronik
Kjell Jeppson
Institutionen för mikroelektronik och nanovetenskap
Institutionen för fasta tillståndets elektronik
European Solid State Device Research Conference ESSDERC
Vol. 1990 10-13 Sept. 1990
0-7503-0065-5 (ISBN)
Ämneskategorier
Elektroteknik och elektronik
ISBN
0-7503-0065-5