A fast method of parameter extraction for MOS transistors
Paper i proceeding, 1990

A fast method of parameter extraction using a limited number of data points is developed for the SPICE level 3 MOS transistor model. Analytical expressions or numerical equations that converge fast are used to calculate the parameters and all interactions between parameters are taken into account. Proper selection of data points ensures physically reasonable values for most extracted parameters.

Parameter extraction

SPICE

Threshold voltage

Solid modeling

Differential equations

Data mining

Algorithm design and analysis

Intrusion detection

MOSFETs

Transistors

Författare

Peter R. Karlsson

Institutionen för fasta tillståndets elektronik

Kjell Jeppson

Institutionen för mikroelektronik och nanovetenskap

Institutionen för fasta tillståndets elektronik

European Solid State Device Research Conference ESSDERC

Vol. 1990 10-13 Sept. 1990

Ämneskategorier

Elektroteknik och elektronik

ISBN

0-7503-0065-5