An analytical strategy for fast extraction of MOS transistor DC parameters applied to the SPICE MOS3 and BSIM models
Paper in proceeding, 1992
A general strategy for direct extraction of MOS transistor DC parameters using only a small number of data points has been developed. This extraction algorithm has been implemented for two semi-empirical SPICE MOS transistor models, MOS3 and BSIM. Fifteen data points were used to determine the ten MOS3 transistor parameters while 25 data points were used to determine the 20 BSIM parameters. It was possible to obtain good agreement between measured and simulated characteristics. It was also shown that series resistance independent parameters can be extracted with a direct parameter extraction algorithm.
Production control
MOSFETs
SPICE
Threshold voltage
Parameter extraction
Data mining
Solid state circuits
Noise measurement
Geometry
Equations
Author
Peter R. Karlsson
Department of Solid State Electronics
Kjell Jeppson
Department of Solid State Electronics
Department of Microelectronics and Nanoscience
Proceedings of the International Conference on Microelectronic Test Structures ICMTS
Vol. 1992 16-19 March 1992
0-7803-0535-3 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering