An analytical strategy for fast extraction of MOS transistor DC parameters applied to the SPICE M)53 and BSIM models
Paper i proceeding, 1992

A general strategy for direct extraction of MOS transistor DC parameters using only a small number of data points has been developed. This extraction algorithm has been implemented for two semi-empirical SPICE MOS transistor models, MOS3 and BSIM. Fifteen data points were used to determine the ten MOS3 transistor parameters while 25 data points were used to determine the 20 BSIM parameters. It was possible to obtain good agreement between measured and simulated characteristics. It was also shown that series resistance independent parameters can be extracted with a direct parameter extraction algorithm.

Solid state circuits

Noise measurement

Parameter extraction

MOSFETs

Geometry

Production control

SPICE

Data mining

Threshold voltage

Equations

Författare

Peter R. Karlsson

Institutionen för fasta tillståndets elektronik

Kjell Jeppson

Institutionen för mikroelektronik och nanovetenskap

Institutionen för fasta tillståndets elektronik

Proceedings of the International Conference on Microelectronic Test Structures ICMTS

Vol. 1992

Ämneskategorier

Elektroteknik och elektronik

ISBN

0-7803-0535-3