Bandgap engineering in nonlinear silicon nitride waveguides
Paper in proceeding, 2017
We show that controlling the bandgap of SiN provides an additional degree of freedom for engineering waveguides for nonlinear optics. We show an optimized structure with gamma*maxLeff = 0.17 rad/W and absence of nonlinear loss.
Author
Clemens Krückel
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Attila Fülöp
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Peter Andrekson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Victor Torres Company
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Published in
2017 Optical Fiber Communication Conference (OFC)
p. M3F.6 - art. no 7936862
978-194358023-1 (ISBN)
Categorizing
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories (SSIF 2011)
Communication Systems
Nano Technology
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
DOI
10.1364/OFC.2017.M3F.6
ISBN
978-194358023-1