Effect of compositional interlayers on the vertical electrical conductivity of Si-doped AlN/GaN distributed Bragg reflectors grown on SiC''
Journal article, 2017
We have investigated the effect of strain-compensating interlayers on the vertical electrical conductivity of Si-doped AlN/GaN distributed Bragg reflectors (DBRs). Samples with 10.5 mirror pairs were grown through plasma-assisted molecular beam epitaxy on SiC. Room-temperature current–voltage characteristics were measured vertically in mesas through 8 of the 10.5 pairs. The sample with no interlayers yields a mean specific series resistance of 0.044 Ω cm2 at low current densities, while three samples with 5/5-Å-thick, 2/2-nm-thick, and graded interlayers have resistivities between 0.16 and 0.34 Ω cm2. Thus, interlayers impair vertical current transport, and they must be designed carefully when developing conductive DBRs.
Author
Seyed Ehsan Hashemi
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Filip Hjort
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Martin Stattin
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Tommy Ive
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Olof Bäcke
Chalmers, Physics, Materials Microstructure
Antiope Lotsari
Chalmers, Physics, Materials Microstructure
Chalmers, Chemistry and Chemical Engineering, Applied Chemistry
Mats Halvarsson
Chalmers, Physics, Materials Microstructure
David Adolph
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Vincent Desmaris
Chalmers, Earth and Space Sciences, Advanced Receiver Development
Denis Meledin
Chalmers, Earth and Space Sciences, Advanced Receiver Development
Åsa Haglund
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Applied Physics Express
18820778 (ISSN) 18820786 (eISSN)
Vol. 10 5 055501- 055501Areas of Advance
Nanoscience and Nanotechnology
Subject Categories
Telecommunications
Nano Technology
Infrastructure
Chalmers Materials Analysis Laboratory
Nanofabrication Laboratory
DOI
10.7567/APEX.10.055501