Effect of compositional interlayers on the vertical electrical conductivity of Si-doped AlN/GaN distributed Bragg reflectors grown on SiC''
Journal article, 2017

We have investigated the effect of strain-compensating interlayers on the vertical electrical conductivity of Si-doped AlN/GaN distributed Bragg reflectors (DBRs). Samples with 10.5 mirror pairs were grown through plasma-assisted molecular beam epitaxy on SiC. Room-temperature current–voltage characteristics were measured vertically in mesas through 8 of the 10.5 pairs. The sample with no interlayers yields a mean specific series resistance of 0.044 Ω cm2 at low current densities, while three samples with 5/5-Å-thick, 2/2-nm-thick, and graded interlayers have resistivities between 0.16 and 0.34 Ω cm2. Thus, interlayers impair vertical current transport, and they must be designed carefully when developing conductive DBRs.

Author

Seyed Ehsan Hashemi

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Filip Hjort

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Martin Stattin

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Tommy Ive

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Olof Bäcke

Chalmers, Physics, Materials Microstructure

Antiope Lotsari

Chalmers, Physics, Materials Microstructure

Chalmers, Chemistry and Chemical Engineering, Applied Chemistry, Applied Surface Chemistry

Mats Halvarsson

Chalmers, Physics, Materials Microstructure

David Adolph

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Vincent Desmaris

Chalmers, Earth and Space Sciences, Advanced Receiver Development

Denis Meledin

Chalmers, Earth and Space Sciences, Advanced Receiver Development

Åsa Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Applied Physics Express

18820778 (ISSN) 18820786 (eISSN)

Vol. 10 5 055501- 055501

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Telecommunications

Nano Technology

Infrastructure

Chalmers Materials Analysis Laboratory

Nanofabrication Laboratory

DOI

10.7567/APEX.10.055501

More information

Latest update

11/7/2018