Design, fabrication and S-parameter characterization of a planar Goubau line from 0.75 THz to 1.1 THz for near-field on-wafer biosensing
Paper in proceeding, 2017
In order to minimize losses and the propagation of substrate modes, the structures were fabricated on a 30 μm benzocyclobutene (BCB) substrate on top of a high resistive silicon that acts as mechanical support.
The structures were characterized with on-wafer S-parameter measurements from 0.75 to 1.1 THz using Vector Network Analyser.
biosensing
on-wafer measurements
VNA
Planar Goubau line
THz
Author
Juan Cabello Sanchez
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Helena Rodilla
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Vladimir Drakinskiy
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
8th International THz-Bio Workshop
Rome, Italy,
Areas of Advance
Information and Communication Technology
Life Science Engineering (2010-2018)
Infrastructure
Kollberg Laboratory
Nanofabrication Laboratory
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering