A Non-galvanic D-band MMIC-to-Waveguide Transition Using eWLB Packaging Technology
Paper in proceeding, 2017

This paper presents a novel D-band interconnect implemented in a low-cost embedded Wafer Level Ball Grid Array (eWLB) commercial process. The non-galvanic transition is realized through a slot antenna directly radiating to a standard air filled waveguide. The interconnect achieves low insertion loss and relatively wide bandwidth. The measured average insertion loss is 3 dB across a bandwidth of 22% covering the frequency range 110-138 GHz. The measured average return loss is -10 dB across the same frequency range. Adopting the low-cost eWLB process and standard waveguides makes the transition an attractive solution for interconnects beyond 100 GHz. This solution enables mm-wave system on chip (SoC) to be manufactured and assembled in high volumes cost effectively. To the authors’ knowledge, this is first attempt to fabricate a packaging solution beyond 100 GHz using eWLB technology.

eWLB

D-band

THz

waveguide transition

interconnects

millimeter waves

Author

Ahmed Adel Hassona

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Zhongxia Simon He

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Chiara Mariotti

Infineon Technologies

F. Dielacher

Infineon Technologies

Vessen Vassilev

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Yinggang Li

Ericsson

Joachim Oberhammer

Royal Institute of Technology (KTH)

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

510-512 8058612

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/MWSYM.2017.8058612

More information

Latest update

11/19/2018