A Non-galvanic D-band MMIC-to-Waveguide Transition Using eWLB Packaging Technology
Paper i proceeding, 2017

This paper presents a novel D-band interconnect implemented in a low-cost embedded Wafer Level Ball Grid Array (eWLB) commercial process. The non-galvanic transition is realized through a slot antenna directly radiating to a standard air filled waveguide. The interconnect achieves low insertion loss and relatively wide bandwidth. The measured average insertion loss is 3 dB across a bandwidth of 22% covering the frequency range 110-138 GHz. The measured average return loss is -10 dB across the same frequency range. Adopting the low-cost eWLB process and standard waveguides makes the transition an attractive solution for interconnects beyond 100 GHz. This solution enables mm-wave system on chip (SoC) to be manufactured and assembled in high volumes cost effectively. To the authors’ knowledge, this is first attempt to fabricate a packaging solution beyond 100 GHz using eWLB technology.

THz

D-band

waveguide transition

eWLB

interconnects

millimeter waves

Författare

Ahmed Adel Hassona

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Zhongxia Simon He

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Chiara Mariotti

Infineon Technologies AG, Austria

F. Dielacher

Infineon Technologies AG, Austria

Vessen Vassilev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Yinggang Li

Ericsson Sweden

Joachim Oberhammer

Kungliga Tekniska Högskolan (KTH)

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

510-512 8058612

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/MWSYM.2017.8058612

ISBN

978-1-5090-6360-4