Vertical-Cavity Silicon-Integrated Laser with In-Plane Waveguide Emission at 850 nm
Journal article, 2018

A continuous-wave electrically-pumped short-wavelength hybrid vertical-cavity silicon-integrated laser (VCSIL) with in-plane emission into a silicon nitride (SiN) waveguide is experimentally demonstrated. The coupling from the vertical cavity into the in-plane SiN waveguide is achieved by a weak grating on the SiN waveguide placed inside the cavity. The grating provides coupling, sets the polarization of the lasing output, and provides transverse mode control. A 5 mu m oxide-aperture diameter device with a threshold current of 1.1 mA produces 73 mu W single-sided waveguide-coupled optical output power at 2.6 mA bias current at a wavelength of 856 nm and a side-mode suppression ratio (SMSR) of 29 dB.

vertical-cavity silicon-integrated laser

silicon photonics

semiconductor lasers

intra-cavity grating

on-chip laser source

Author

Sulakshna Kumari

Ghent university

Emanuel Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Johan Gustavsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Gunther Roelkens

Ghent university

Roel G. Baets

Ghent university

Laser and Photonics Reviews

1863-8880 (ISSN) 1863-8899 (eISSN)

Vol. 12 2 1700206- 1700206

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Atom and Molecular Physics and Optics

Nano Technology

Infrastructure

Nanofabrication Laboratory

DOI

10.1002/lpor.201700206

More information

Latest update

5/8/2018 6