Tailoring the Thermal and Mechanical Properties of Graphene Film by Structural Engineering
Journal article, 2018

Due to substantial phonon scattering induced by various structural defects, the in-plane thermal conductivity (K) of graphene films (GFs) is still inferior to the commercial pyrolytic graphite sheet (PGS). Here, the problem is solved by engineering the structures of GFs in the aspects of grain size, film alignment, and thickness, and interlayer binding energy. The maximum K of GFs reaches to 3200 W m−1K−1and outperforms PGS by 60%. The superior K of GFs is strongly related to its large and intact grains, which are over four times larger than the best PGS. The large smooth features about 11 µm and good layer alignment of GFs also benefit on reducing phonon scattering induced by wrinkles/defects. In addition, the presence of substantial turbostratic-stacking graphene is found up to 37% in thin GFs. The lacking of order in turbostratic-stacking graphene leads to very weak interlayer binding energy, which can significantly decrease the phonon interfacial scattering. The GFs also demonstrate excellent flexibility and high tensile strength, which is about three times higher than PGS. Therefore, GFs with optimized structures and properties show great potentials in thermal management of form-factor-driven electronics and other high-power-driven systems.

phonon transfer

thermal conductivity

turbostratic-stacking

grain size

graphene films

Author

Nan Wang

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

Majid Kabiri Samani

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

Hu Li

Uppsala University

Lan Dong

Tongji University

Zhongwei Zhang

Tongji University

Peng Su

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

S. Chen

Shanghai University

Jie Chen

Tongji University

S. Huang

Shanghai University

G. Yuan

Shanghai University

Xiangfan Xu

Tongji University

Baowen Li

University of Colorado at Boulder

Klaus Leifer

Uppsala University

L. Ye

SHT Smart High-Tech

Johan Liu

Shanghai University

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

Small

1613-6810 (ISSN) 1613-6829 (eISSN)

Vol. 14 29 1801346

Areas of Advance

Production

Subject Categories

Materials Chemistry

Other Physics Topics

Condensed Matter Physics

DOI

10.1002/smll.201801346

More information

Latest update

9/5/2018 8