Tailoring the Thermal and Mechanical Properties of Graphene Film by Structural Engineering
Artikel i vetenskaplig tidskrift, 2018
Due to substantial phonon scattering induced by various structural defects, the in-plane thermal conductivity (K) of graphene films (GFs) is still inferior to the commercial pyrolytic graphite sheet (PGS). Here, the problem is solved by engineering the structures of GFs in the aspects of grain size, film alignment, and thickness, and interlayer binding energy. The maximum K of GFs reaches to 3200 W m−1K−1and outperforms PGS by 60%. The superior K of GFs is strongly related to its large and intact grains, which are over four times larger than the best PGS. The large smooth features about 11 µm and good layer alignment of GFs also benefit on reducing phonon scattering induced by wrinkles/defects. In addition, the presence of substantial turbostratic-stacking graphene is found up to 37% in thin GFs. The lacking of order in turbostratic-stacking graphene leads to very weak interlayer binding energy, which can significantly decrease the phonon interfacial scattering. The GFs also demonstrate excellent flexibility and high tensile strength, which is about three times higher than PGS. Therefore, GFs with optimized structures and properties show great potentials in thermal management of form-factor-driven electronics and other high-power-driven systems.
phonon transfer
thermal conductivity
turbostratic-stacking
grain size
graphene films
Författare
Nan Wang
Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system
Majid Kabiri Samani
Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system
Hu Li
Uppsala universitet
Lan Dong
Tongji University
Zhongwei Zhang
Tongji University
Peng Su
Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system
S. Chen
Shanghai University
Jie Chen
Tongji University
S. Huang
Shanghai University
G. Yuan
Shanghai University
Xiangfan Xu
Tongji University
Baowen Li
University of Colorado at Boulder
Klaus Leifer
Uppsala universitet
L. Ye
SHT Smart High-Tech
Johan Liu
Shanghai University
Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system
Small
1613-6810 (ISSN) 1613-6829 (eISSN)
Vol. 14 29 1801346Styrkeområden
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Ämneskategorier
Materialkemi
Annan fysik
Den kondenserade materiens fysik
DOI
10.1002/smll.201801346