Low-frequency Noise Characterization of Graphene FET THz Detectors
Paper in proceedings, 2018

Graphene field-effect transistors are promising for direct detection of THz signals at room temperature. The sensitivity of such detectors can be in part limited by the low-frequency noise. Here, we report on the characterization of the low-frequency noise of graphene field-effect transistor THz
detectors in the frequency range from 1 Hz to 1 MHz. The room-temperature Hooge parameter is extracted to be around 2×10-3. The voltage responsivity at room-temperature and the corresponding minimum noise equivalent power at 0.3 THz are estimated to be 11 V/W and 0.2 nW/Hz0.5, respectively, at a modulation frequency of 333 Hz, which shows comparable results with other detector technologies.

Graphene field-effect transistors

, terahertz, detector

Author

Xinxin Yang

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Andrei Vorobiev

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Kjell Jeppson

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Luca Banszerus

RWTH Aachen University

Christoph Stampfer

RWTH Aachen University

Martin Otto

AMO

Daniel Neumaier

AMO

43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Nagoya, Japan,

Graphene Core1. Graphene-based disruptive technologies (Graphene Flagship)

European Commission (Horizon 2020), 2016-04-01 -- 2018-03-31.

Flexibla terahertz detektorer i grafen

Swedish Research Council (VR), 2018-01-01 -- 2021-12-31.

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Subject Categories

Nano Technology

DOI

10.1109/IRMMW-THz.2018.8510404

ISBN

9781538638095

More information

Latest update

1/11/2019