A 140 GHz Transmitter with an Integrated Chip-to-Waveguide Transition using 130nm SiGe BiCMOS Process
Paper in proceeding, 2018
This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology with f(t)/f(max) values of 250 GHz/ 370 GHz. This design comprises of a frequency sixtupler, a balanced transconductance mixer, an amplifier and chip-to-waveguide transition. The frequency multiplier operates in wide frequency band from 110-147 GHz, while the amplifier operates between 115-155 GHz. The total DC power consumption of the chipset is 420 mW. The chip size is 3 mm x 0.73 mm including chip-to-waveguide transition. The transmitter gives -4 dBm output power at 140 GHz and can operate between 129-148 GHz. Wireless data transmission up to 6 Gbps is measured using PSK and QAM modulation schemes.
D-band
mixer
SiGe BiCMOS
transmitter chipset
chip-to-waveguide transition
Author
Zhongxia Simon He
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mingquang Bao
Ericsson
Yinggang Li
Ericsson
Ahmed Adel Hassona
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
James Campion
Royal Institute of Technology (KTH)
Joachim Oberhammer
Royal Institute of Technology (KTH)
Herbert Zirath
Ericsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Asia Pacific Microwave Conference-Proceedings
28-30
9784902339451 (ISBN)
Asia-Pacific Microwave Conference (APMC)
Kyoto, Japan,
Kyoto, Japan,
Micromachined terahertz systems -a new heterogeneous integration platform enabling the commercialization of the THz frequency spectrum (M3TERA)
European Commission (EC) (EC/H2020/644039), 2015-02-01 -- 2017-12-31.
Subject Categories
Telecommunications
Communication Systems
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.23919/APMC.2018.8617372