Effect of graphene substrate type on formation of Bi 2 Se 3 nanoplates
Journal article, 2019

Knowledge of nucleation and further growth of Bi 2 Se 3 nanoplates on different substrates is crucial for obtaining ultrathin nanostructures and films of this material by physical vapour deposition technique. In this work, Bi 2 Se 3 nanoplates were deposited under the same experimental conditions on different types of graphene substrates (as-transferred and post-annealed chemical vapour deposition grown monolayer graphene, monolayer graphene grown on silicon carbide substrate). Dimensions of the nanoplates deposited on graphene substrates were compared with the dimensions of the nanoplates deposited on mechanically exfoliated mica and highly ordered pyrolytic graphite flakes used as reference substrates. The influence of different graphene substrates on nucleation and further lateral and vertical growth of the Bi 2 Se 3 nanoplates is analysed. Possibility to obtain ultrathin Bi 2 Se 3 thin films on these substrates is evaluated. Between the substrates considered in this work, graphene grown on silicon carbide is found to be the most promising substrate for obtaining of 1–5 nm thick Bi 2 Se 3 films.

Author

J. Andzane

University of Latvia

Liga Britala

University of Latvia

Edijs Kauranens

University of Latvia

Aleksandrs Neciporenko

University of Latvia

M. Baitimirova

University of Latvia

Samuel Lara Avila

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

National Physical Laboratory (NPL)

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Mikhael Bechelany

University of Montpellier

Donats Érts

University of Latvia

Scientific Reports

2045-2322 (ISSN)

Vol. 9 1 4791

Subject Categories

Inorganic Chemistry

Manufacturing, Surface and Joining Technology

Other Materials Engineering

DOI

10.1038/s41598-019-41178-1

More information

Latest update

4/15/2019