Effect of graphene substrate type on formation of Bi 2 Se 3 nanoplates
Artikel i vetenskaplig tidskrift, 2019

Knowledge of nucleation and further growth of Bi 2 Se 3 nanoplates on different substrates is crucial for obtaining ultrathin nanostructures and films of this material by physical vapour deposition technique. In this work, Bi 2 Se 3 nanoplates were deposited under the same experimental conditions on different types of graphene substrates (as-transferred and post-annealed chemical vapour deposition grown monolayer graphene, monolayer graphene grown on silicon carbide substrate). Dimensions of the nanoplates deposited on graphene substrates were compared with the dimensions of the nanoplates deposited on mechanically exfoliated mica and highly ordered pyrolytic graphite flakes used as reference substrates. The influence of different graphene substrates on nucleation and further lateral and vertical growth of the Bi 2 Se 3 nanoplates is analysed. Possibility to obtain ultrathin Bi 2 Se 3 thin films on these substrates is evaluated. Between the substrates considered in this work, graphene grown on silicon carbide is found to be the most promising substrate for obtaining of 1–5 nm thick Bi 2 Se 3 films.

Författare

J. Andzane

Latvijas Universitate

Liga Britala

Latvijas Universitate

Edijs Kauranens

Latvijas Universitate

Aleksandrs Neciporenko

Latvijas Universitate

M. Baitimirova

Latvijas Universitate

Samuel Lara Avila

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

National Physical Laboratory (NPL)

Sergey Kubatkin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Mikhael Bechelany

Université de Montpellier

Donats Érts

Latvijas Universitate

Scientific Reports

2045-2322 (ISSN)

Vol. 9 1 4791

Ämneskategorier

Oorganisk kemi

Bearbetnings-, yt- och fogningsteknik

Annan materialteknik

DOI

10.1038/s41598-019-41178-1

Mer information

Senast uppdaterat

2019-04-15