In Situ Growth of CVD Graphene Directly on Dielectric Surface toward Application
Journal article, 2020
A technique for the in situ growth of patterned graphene by CVD has been achieved directly on insulating substrates at 800 degrees C. The graphene growth is catalyzed by a Ni-Cu alloy sacrificial layer, which integrates many advantages such as being lithography-free, and almost wrinkle-free, with a high repeatability and rapid growth. The etching method of the metal sacrificial layer is the core of this technique, and the mechanism is analyzed. Graphene has been found to play an important role in accelerating etching speeds. The Ni-Cu alloy exhibits a high catalytic activity, and thus, high-quality graphene can be obtained at a lower temperature. Moreover, the Ni-Cu layer accommodates a limited amount of carbon atoms, which ensures a high monolayer ratio of the graphene. The carbon solid solubility of the alloy is calculated theoretically and used to explain the experimental findings. The method is compatible with the current semiconductor process and is conducive to the industrialization of graphene devices.
chemical vapor deposition
graphene
insulating substrate
in situ growth
lithography-free
Author
Yibo Dong
Beijing University of Technology
Sheng Guo
Chalmers, Industrial and Materials Science, Materials and manufacture
Huahai Mao
Thermo-Calc Software
Royal Institute of Technology (KTH)
Chen Xu
Beijing University of Technology
Yiyang Xie
Beijing University of Technology
Jun Deng
Beijing University of Technology
Le Wang
Beijing University of Technology
Zaifa Du
Beijing University of Technology
Fangzhu Xiong
Beijing University of Technology
Jie Sun
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
ACS Applied Electronic Materials
26376113 (eISSN)
Vol. 2 1 238-246Subject Categories
Materials Chemistry
Metallurgy and Metallic Materials
Condensed Matter Physics
Areas of Advance
Materials Science
DOI
10.1021/acsaelm.9b00719