Fabrication and electrical transport characterization of high quality underdoped YBa2Cu3O7-δ nanowires
Journal article, 2020

We present the fabrication and electrical transport characterization of underdoped YBa2Cu3O7-δnanowires. The nanowires have been realized without any protective capping layer and theyshow transport properties similar to those of the parent thin film, demonstrating that they havenot been damaged by the nanopatterning. The current-voltage characteristics of the underdopednanowires show large hysteretic voltage switching at the critical current, in contrast to theflux-flow like characteristics of optimally doped nanostructures, indicating the formation of aself-stabilizing hot spot. These results open up new possibilities for using the underdopednanowires as single photon detectors and for exploring the underdoped side of the YBa2Cu3O7-δphase diagram at the nanoscale.

superconductingdetectors

underdoped nanostructures

high temperature superconductors

Author

Eric Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Riccardo Arpaia

Polytechnic University of Milan

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Edoardo Trabaldo

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Thilo Bauch

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Floriana Lombardi

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Superconductor Science and Technology

0953-2048 (ISSN) 1361-6668 (eISSN)

Vol. 33 6 064002

Functional Dirac Materials

Knut and Alice Wallenberg Foundation, 2014-07-01 -- 2019-06-30.

Roots

Basic sciences

Subject Categories

Nano Technology

Condensed Matter Physics

Infrastructure

Nanofabrication Laboratory

DOI

10.1088/1361-6668/ab807e

More information

Latest update

7/24/2020