Fabrication and electrical transport characterization of high quality underdoped YBa2Cu3O7-δ nanowires
Artikel i vetenskaplig tidskrift, 2020

We present the fabrication and electrical transport characterization of underdoped YBa2Cu3O7-δnanowires. The nanowires have been realized without any protective capping layer and theyshow transport properties similar to those of the parent thin film, demonstrating that they havenot been damaged by the nanopatterning. The current-voltage characteristics of the underdopednanowires show large hysteretic voltage switching at the critical current, in contrast to theflux-flow like characteristics of optimally doped nanostructures, indicating the formation of aself-stabilizing hot spot. These results open up new possibilities for using the underdopednanowires as single photon detectors and for exploring the underdoped side of the YBa2Cu3O7-δphase diagram at the nanoscale.

superconductingdetectors

underdoped nanostructures

high temperature superconductors

Författare

Eric Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Riccardo Arpaia

Politecnico di Milano

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Edoardo Trabaldo

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Thilo Bauch

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Floriana Lombardi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Superconductor Science and Technology

0953-2048 (ISSN) 1361-6668 (eISSN)

Vol. 33 6 064002

Functional Dirac Materials

Knut och Alice Wallenbergs Stiftelse, 2014-07-01 -- 2019-06-30.

Fundament

Grundläggande vetenskaper

Ämneskategorier

Nanoteknik

Den kondenserade materiens fysik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1088/1361-6668/ab807e

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Senast uppdaterat

2020-07-24