GaN-based vertical-cavity surface-emitting laser incorporating a TiO2 high-index-contrast grating
Paper in proceeding, 2020
We demonstrate the first electrically injected GaN-based VCSEL with a TiO2 high-contrast grating (HCG) as the top mirror. The TiO2-HCG rested directly on the n-GaN without an airgap for mechanical stability. A VCSEL with an aperture diameter of 10 mu m had a threshold current of 25 mA under pulsed operation at room temperature. Multiple longitudinal modes coexist around 400 nm, each TM-polarized with a linewidth of 0.5 nm (spectral resolution limited). This first demonstration of a TiO2-HCG VCSEL offers a new route to achieve polarization pinning and could also allow additional benefits such as post-growth setting of resonance wavelength.
electrically driven device
TiO2
polarization selectivity
vertical-cavity surface-emitting laser
GaN
VCSEL
high-index-contrast grating
HCG
micro-cavity
Author
Tsu-Chi Chang
National Chiao Tung University
Seyed Ehsan Hashemi
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Jörgen Bengtsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Johan Gustavsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Åsa Haglund
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Tien-Chang Lu
National Chiao Tung University
Proceedings of SPIE - The International Society for Optical Engineering
0277786X (ISSN) 1996756X (eISSN)
Vol. 11280 112800M978-1-5106-3324-7 (ISBN)
Conference on Gallium Nitride Materials and Devices XV
San Francisco, CA, USA,
San Francisco, CA, USA,
Subject Categories
Atom and Molecular Physics and Optics
Other Physics Topics
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1117/12.2545315