GaN-based vertical-cavity surface-emitting laser incorporating a TiO2 high-index-contrast grating
Paper i proceeding, 2020

We demonstrate the first electrically injected GaN-based VCSEL with a TiO2 high-contrast grating (HCG) as the top mirror. The TiO2-HCG rested directly on the n-GaN without an airgap for mechanical stability. A VCSEL with an aperture diameter of 10 mu m had a threshold current of 25 mA under pulsed operation at room temperature. Multiple longitudinal modes coexist around 400 nm, each TM-polarized with a linewidth of 0.5 nm (spectral resolution limited). This first demonstration of a TiO2-HCG VCSEL offers a new route to achieve polarization pinning and could also allow additional benefits such as post-growth setting of resonance wavelength.

electrically driven device

TiO2

polarization selectivity

vertical-cavity surface-emitting laser

GaN

VCSEL

high-index-contrast grating

HCG

micro-cavity

Författare

Tsu-Chi Chang

National Chiao Tung University

Seyed Ehsan Hashemi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Jörgen Bengtsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Åsa Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Tien-Chang Lu

National Chiao Tung University

GALLIUM NITRIDE MATERIALS AND DEVICES XV

0277-786X (ISSN) 1996-756X (eISSN)

Vol. 11280 112800M

Conference on Gallium Nitride Materials and Devices XV
San Francisco, CA, USA,

Ämneskategorier

Atom- och molekylfysik och optik

Annan fysik

Annan elektroteknik och elektronik

DOI

10.1117/12.2545315

Mer information

Senast uppdaterat

2020-09-16