Seyed Ehsan Hashemi

Visar 19 publikationer

2019

Blue and ultraviolet vertical-cavity surface-emitting lasers

Åsa Haglund, Michael Alexander Bergmann, Filip Hjort et al
CLEO: Science and Innovations 2019
Paper i proceeding
2018

Vertical Electrical Conductivity of ZnO/GaN Multilayers for Application in Distributed Bragg Reflectors

Filip Hjort, Seyed Ehsan Hashemi, David Adolph et al
IEEE Journal of Quantum Electronics. Vol. 54 (4)
Artikel i vetenskaplig tidskrift
2018

GaN vertical-cavity surface-emitting laser with a high-contrast grating reflector

Tsu-Chi Chang, Shuo-Yi Kuo, Seyed Ehsan Hashemi et al
Proc. SPIE 10542, High Contrast Metastructures VII. Vol. 10542
Paper i proceeding
2018

Lasing Action in GaN-Based VCSELs with top High-Contrast Grating Reflectors

Tsu Chi Chang, Shuo Yi Kuo, Seyed Ehsan Hashemi et al
Conference Digest - IEEE International Semiconductor Laser Conference. Vol. 2018-September, p. 191-192
Paper i proceeding
2017

Effect of compositional interlayers on the vertical electrical conductivity of Si-doped AlN/GaN distributed Bragg reflectors grown on SiC''

Seyed Ehsan Hashemi, Filip Hjort, Martin Stattin et al
Applied Physics Express. Vol. 10 (5), p. 055501-
Artikel i vetenskaplig tidskrift
2017

Electrically conductive ZnO/GaN distributed Bragg reflectors grown by hybrid plasma-assisted molecular beam epitaxy

Filip Hjort, Seyed Ehsan Hashemi, David Adolph et al
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 10104, p. 1010413-1
Paper i proceeding
2017

Nanoscale structuring to improve laser performance

Åsa Haglund, Seyed Ehsan Hashemi, Filip Hjort et al
Paper i proceeding
2017

Thermal lensing effects on lateral leakage in GaN-based vertical-cavity surface-emitting laser cavities

Seyed Ehsan Hashemi, Jörgen Bengtsson, Johan Gustavsson et al
Optics Express. Vol. 25 (9), p. 9556-9568
Artikel i vetenskaplig tidskrift
2016

Progress and challenges in electrically pumped GaN-based VCSELs

Åsa Haglund, Seyed Ehsan Hashemi, Jörgen Bengtsson et al
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9892
Paper i proceeding
2016

Progress and challenges in electrically pumped GaN-based VCSELs

Åsa Haglund, Seyed Ehsan Hashemi, Jörgen Bengtsson et al
Paper i proceeding
2015

Air-suspended TiO2-based HCG reflectors for visible spectral range

Seyed Ehsan Hashemi, Jörgen Bengtsson, Johan Gustavsson et al
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9372, p. Art. no. 93720D-
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2015

GaN-based VCSELs

Åsa Haglund, Seyed Ehsan Hashemi, Jörgen Bengtsson et al
VI Workshop on Physics and Technology of Semiconductor Lasers
Paper i proceeding
2015

TiO2 membrane high-contrast grating reflectors for vertical-cavity light-emitters in the visible wavelength regime

Seyed Ehsan Hashemi, Jörgen Bengtsson, Johan Gustavsson et al
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. Vol. 33 (5)
Artikel i vetenskaplig tidskrift
2014

Analysis of structurally sensitive loss in GaN-based VCSEL cavities and its effect on modal discrimination

Seyed Ehsan Hashemi, Jörgen Bengtsson, Johan Gustavsson et al
Optics Express. Vol. 22 (1), p. 411-426
Artikel i vetenskaplig tidskrift
2014

Triggering of guiding and antiguiding effects in GaN-based VCSELs

Seyed Ehsan Hashemi, Jörgen Bengtsson, Johan Gustavsson et al
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9001
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2013

Engineering the Lateral Optical Guiding in Gallium Nitride (GaN)-based Vertical-Cavity Surface-Emitting Laser (VCSEL) Cavities to Reach the Lowest Threshold Gain

Seyed Ehsan Hashemi, Johan Gustavsson, Jörgen Bengtsson et al
Japanese Journal of Applied Physics. Vol. 52 (8 PART 2), p. 08JG04 -
Artikel i vetenskaplig tidskrift
2012

Engineering the transverse optical guiding in GaN-based VCSELs to avoid detrimental optical loss

Seyed Ehsan Hashemi, Johan Gustavsson, Jörgen Bengtsson et al
International Workshop on Nitride Semiconductors 2012, October 14-19, 2012, Sapporo, Japan, p. ThP-OD-33
Poster (konferens)

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