Lasing Action in GaN-Based VCSELs with top High-Contrast Grating Reflectors
Paper i proceeding, 2018

We report a GaN-based VCSEL with a high-contrast grating (HCG) as the top mirror. The HCG consisted of TiO2 and rested directly on the n-GaN without an airgap or the use of any DBR layers to boost the reflectivity. The full VCSEL structure was optically pumped at room temperature and showed a lasing threshold of approximately 0.99 MW/cm2 and a lasing wavelength at 369.8 nm. The demonstration of HCG GaN-based VCSEL opens up the possibility to explore all the potential benefits of HCGs in the blue and ultraviolet spectral regime.

vertical cavity surface emitting laser (VCSEL)

TiO 2

GaN

high contrast grating (HCG)

Författare

Tsu Chi Chang

National Chiao Tung University Taiwan

Shuo Yi Kuo

National Chiao Tung University Taiwan

Seyed Ehsan Hashemi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Åsa Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Tien Chang Lu

National Chiao Tung University Taiwan

Conference Digest - IEEE International Semiconductor Laser Conference

08999406 (ISSN)

Vol. 2018-September 191-192 8516231

26th International Semiconductor Laser Conference, ISLC 2018
Santa Fe, USA,

Ämneskategorier

Atom- och molekylfysik och optik

Annan fysik

Den kondenserade materiens fysik

DOI

10.1109/ISLC.2018.8516231

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Senast uppdaterat

2018-12-14