A 24 GHz Sub-Harmonically Pumped Resistive Mixer in GaN HEMT Technology
Paper in proceedings, 2020

—This paper presents the design and the characterization of a 24 GHz sub-harmonically pumped resistive mixer (SHM) in an advanced gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The mixer is desired for building up a high-performance phaselocked W-band signal source, and is designed in a singlebalanced configuration, where the balanced LO input is generated by an on-chip first order lattice balun. In measurement, a conversion loss around 12 dB is achieved at the RF bandwidth of 22-28 GHz and the IF bandwidth of 3-6 GHz with a LO power of 10 dBm. The mixer exhibits an RF input P1dB of 13 dBm, and the measured LO to IF isolation achieves 40 dB at the desired LO of 10 GHz. To the best of the author’s knowledge, this is the first sub-harmonically pumped mixer in GaN HEMT technology.

—resistive mixer

GaN HEMT

isolation

conversion loss

Author

Yu Yan

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Thi Ngoc Do Thanh

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Dan Kuylenstierna

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
New York, ,

GaN mm-wave Radar Components Embedded (GRACE)

European Commission (EC), 2018-11-01 -- 2020-10-31.

Areas of Advance

Information and Communication Technology

Subject Categories

Telecommunications

Signal Processing

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

12/21/2020