A 24 GHz Sub-Harmonically Pumped Resistive Mixer in GaN HEMT Technology
Paper i proceeding, 2020

—This paper presents the design and the characterization of a 24 GHz sub-harmonically pumped resistive mixer (SHM) in an advanced gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The mixer is desired for building up a high-performance phaselocked W-band signal source, and is designed in a singlebalanced configuration, where the balanced LO input is generated by an on-chip first order lattice balun. In measurement, a conversion loss around 12 dB is achieved at the RF bandwidth of 22-28 GHz and the IF bandwidth of 3-6 GHz with a LO power of 10 dBm. The mixer exhibits an RF input P1dB of 13 dBm, and the measured LO to IF isolation achieves 40 dB at the desired LO of 10 GHz. To the best of the author’s knowledge, this is the first sub-harmonically pumped mixer in GaN HEMT technology.

—resistive mixer

GaN HEMT

isolation

conversion loss

Författare

Yu Yan

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

Thi Ngoc Do Thanh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

Dan Kuylenstierna

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
New York, USA,

GaN mm-wave Radar Components Embedded (GRACE)

Europeiska kommissionen (EU), 2018-11-01 -- 2020-10-31.

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Telekommunikation

Signalbehandling

Annan elektroteknik och elektronik

DOI

10.1109/BCICTS48439.2020.9392981

ISBN

9781728197494

Mer information

Senast uppdaterat

2021-05-20