Graphene oxide for nonvolatile memory application by using electrophoretic technique
Journal article, 2020

The experimental work presented here, for the first time using electrophoretic technique to fabricate graphene oxide (GO)-based resistive random access memory (RRAM). By using electrophoretic technique, nonvolatile RRAM devices with Aluminum (Al)/GO/Indium tin oxide (ITO) cross-bar sandwich-like structure were fabricated. The fabricated devices show typical bipolar resistant switching behavior with ON/OFF ratio more than 10, retention time more than 102 s, and transition voltage less than 1.7 V. The switching mechanism for the devices is ascribed to the formation and rupture of the conducting filament induced by the diffusion of oxygen ions. The results show that the electrophoretic technique holds great potential for film manufacturing for RRAM.

Graphene oxide





Hao Liu

Shanghai University

Jun Li

Shanghai University

S. Chen

Shanghai University

Jin Cao

Shanghai University

Bin Wei

Shanghai University

Johan Liu

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems Laboratory

Shanghai University

Yong Zhang

Shanghai University

Materials Today Communications

2352-4928 (ISSN)

Vol. 25 101537

Subject Categories


Materials Chemistry

Condensed Matter Physics



More information

Latest update

1/4/2021 9