A low phase noise W-band MMIC GaN HEMT oscillator
Paper in proceeding, 2020
This paper presents a fundamental mode W-band MMIC balanced Colpitts oscillator implemented in an advanced 60 nm gallium nitride (GaN) high electron mobility transistor (HEMT) process from OMMIC foundry. The oscillator operates around 85 GHz with measured peak output power of nearly 0 dBm and phase noise at 10 MHz offset of -120 dBc/Hz. To the best authors’ knowledge, the phase noise is state-of-the-art value for W-band monolithic microwave integrated circuit (MMIC) GaN HEMT oscillators.
millimeter-wave
HEMT
gallium nitride (GaN)
monolithic microwave integrated circuit (MMIC)
—oscillator
W-band (75-110 GHz).
phase noise
Author
Thi Ngoc Do Thanh
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Yu Yan
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Dan Kuylenstierna
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Published in
Asia-Pacific Microwave Conference Proceedings, APMC
Vol. 2020-December p. 115-115
9781728169620 (ISBN)
Conference
2020 Asia Pacific Microwave Conference
Hongkong, China, 2020-12-07 - 2020-12-10
Hongkong, China, 2020-12-07 - 2020-12-10
Research Project(s)
GaN mm-wave Radar Components Embedded (GRACE)
European Commission (EC) (EC/H2020/821270), 2018-11-01 -- 2020-10-31.
Categorizing
Areas of Advance
Information and Communication Technology
Infrastructure
Kollberg Laboratory
Subject Categories (SSIF 2011)
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
DOI
10.1109/APMC47863.2020.9331430