A low phase noise W-band MMIC GaN HEMT oscillator
Paper i proceeding, 2020
This paper presents a fundamental mode W-band MMIC balanced Colpitts oscillator implemented in an advanced 60 nm gallium nitride (GaN) high electron mobility transistor (HEMT) process from OMMIC foundry. The oscillator operates around 85 GHz with measured peak output power of nearly 0 dBm and phase noise at 10 MHz offset of -120 dBc/Hz. To the best authors’ knowledge, the phase noise is state-of-the-art value for W-band monolithic microwave integrated circuit (MMIC) GaN HEMT oscillators.
—oscillator
monolithic microwave integrated circuit (MMIC)
phase noise
gallium nitride (GaN)
millimeter-wave
W-band (75-110 GHz).
HEMT
Författare
Thi Ngoc Do Thanh
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik
Yu Yan
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik
Dan Kuylenstierna
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik
Asia-Pacific Microwave Conference Proceedings, APMC
115-115
2020 Asia Pacific Microwave Conference
Hongkong, China,
Hongkong, China,
GaN mm-wave Radar Components Embedded (GRACE)
Europeiska kommissionen (EU), 2018-11-01 -- 2020-10-31.
Styrkeområden
Informations- och kommunikationsteknik
Infrastruktur
Kollberglaboratoriet
Ämneskategorier
Elektroteknik och elektronik
DOI
10.1109/APMC47863.2020.9331430