Modeling Tunnel Junctions for VCSELs: A Self-Consistent NEGF-DD Approach
Paper in proceeding, 2020
In this work we investigate carrier transport in tunnel junctions for vertical-cavity surface-emitting lasers by a novel self-consistent simulation framework for semiconductor quantum devices. Based on a Poisson-drift-diffusion foundation, in this approach quantum features are described through a nonequilibrium Green's function formalism. The simulator is validated through a comparison with experimental results.
Author
Alberto Tibaldi
Polytechnic University of Turin
Alberto Gullino
Polytechnic University of Turin
Jesus Gonzalez Montoya
Polytechnic University of Turin
Matteo Alasio
Polytechnic University of Turin
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
P. Debernardi
Polytechnic University of Turin
M. Goano
Polytechnic University of Turin
Marco Vallone
Polytechnic University of Turin
Giovanni Ghione
Polytechnic University of Turin
Enrico Bellotti
Boston University
Francesco Bertazzi
Polytechnic University of Turin
Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
21583234 (ISSN)
Vol. 2020-September 67-68 92176849781728160863 (ISBN)
2020 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2020
Turin, Italy,
Turin, Italy,
Subject Categories
Atom and Molecular Physics and Optics
Other Physics Topics
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/NUSOD49422.2020.9217684