Modeling Tunnel Junctions for VCSELs: A Self-Consistent NEGF-DD Approach
Paper in proceeding, 2020

In this work we investigate carrier transport in tunnel junctions for vertical-cavity surface-emitting lasers by a novel self-consistent simulation framework for semiconductor quantum devices. Based on a Poisson-drift-diffusion foundation, in this approach quantum features are described through a nonequilibrium Green's function formalism. The simulator is validated through a comparison with experimental results.

Author

Alberto Tibaldi

Polytechnic University of Turin

Alberto Gullino

Polytechnic University of Turin

Jesus Gonzalez Montoya

Polytechnic University of Turin

Matteo Alasio

Polytechnic University of Turin

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

P. Debernardi

Polytechnic University of Turin

M. Goano

Polytechnic University of Turin

Marco Vallone

Polytechnic University of Turin

Giovanni Ghione

Polytechnic University of Turin

Enrico Bellotti

Boston University

Francesco Bertazzi

Polytechnic University of Turin

Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD

21583234 (ISSN)

Vol. 2020-September 67-68 9217684

2020 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2020
Turin, Italy,

Subject Categories

Atom and Molecular Physics and Optics

Other Physics Topics

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/NUSOD49422.2020.9217684

More information

Latest update

5/17/2021