Modeling Tunnel Junctions for VCSELs: A Self-Consistent NEGF-DD Approach
Paper i proceeding, 2020
In this work we investigate carrier transport in tunnel junctions for vertical-cavity surface-emitting lasers by a novel self-consistent simulation framework for semiconductor quantum devices. Based on a Poisson-drift-diffusion foundation, in this approach quantum features are described through a nonequilibrium Green's function formalism. The simulator is validated through a comparison with experimental results.
Författare
Alberto Tibaldi
Politecnico di Torino
Alberto Gullino
Politecnico di Torino
Jesus Gonzalez Montoya
Politecnico di Torino
Matteo Alasio
Politecnico di Torino
Anders Larsson
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
P. Debernardi
Politecnico di Torino
M. Goano
Politecnico di Torino
Marco Vallone
Politecnico di Torino
Giovanni Ghione
Politecnico di Torino
Enrico Bellotti
Boston University
Francesco Bertazzi
Politecnico di Torino
Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
21583234 (ISSN)
Vol. 2020-September 67-68 92176849781728160863 (ISBN)
2020 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2020
Turin, Italy,
Turin, Italy,
Ämneskategorier
Atom- och molekylfysik och optik
Annan fysik
Annan elektroteknik och elektronik
DOI
10.1109/NUSOD49422.2020.9217684