A 2x6b 8GS/s 17-24GHz I/Q RF-DAC based Transmitter in 22nm FDSOI CMOS
Journal article, 2021

We describe a 2×6 bit Cartesian RF IQ-modulator, implemented on 0.15mm2 in a 22nm FDSOI CMOS technology. Measurements show a 3dB bandwidth of 17–24 GHz and a saturated output power of 10.4dBm with a peak drain efficiency of 15.6%. The IQ-modulator has been verified up to 8GS/s. To the best of our knowledge, this is the highest-frequency CMOS RF IQ-modulator using sub-50%-duty-cycle LO signals, and the highest sample rate reported for >3 bit fully integrated Cartesian IQ-modulators.

RF-DAC

SOI CMOS

IQ-modulator

Author

Victor Åberg

Chalmers, Computer Science and Engineering (Chalmers), Computer Engineering (Chalmers), Electronics Systems

Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Lars Svensson

Chalmers, Computer Science and Engineering (Chalmers), Computer Engineering (Chalmers), Electronics Systems

IEEE Microwave and Wireless Components Letters

1531-1309 (ISSN)

Vol. 31 8 929-932

Areas of Advance

Information and Communication Technology

Infrastructure

Kollberg Laboratory

Subject Categories

Communication Systems

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/LMWC.2021.3089779

More information

Latest update

8/26/2021