E/W-Band CPW-based Amplifier MMICs Fabricated in a 60 nm GaN-on-Silicon Foundry Process
Paper in proceeding, 2021

This paper presents an experimental evaluation of two co-planar waveguide (CPW) based E/W-band amplifier MMICs realised in a 60 nm GaN-on-Si foundry process. A one-stage amplifier and a two-stage amplifier realised in this process have a measured maximum gain of 8 dB and 16 dB at 73-74 GHz, respectively. The two amplifiers have a measured gain of 3 dB and 7 dB at 93 GHz when the drain voltage (Vd) is 10 V and the drain current (Id) is 15 mA per stage. The two-stage amplifier has a measured noise figure (NF) of 2.7-3.8 dB and 2.9-4.1 dB at 90-95 GHz when the Id is 10 mA and Vd is 5 V and 10 V, respectively. The measured NF of this amplifier is equal to 4-6 dB at 92-95 GHz when an Id of 10-20 mA is used in each stage with same drain bias.

W-band amplifiers

noise characterization

power handling

60 nm GaN-on-Si MMIC process


Robert Malmqvist

Swedish Defence Research Agency (FOI)

Rolf Jonsson

Swedish Defence Research Agency (FOI)

Anders Bernland

Swedish Defence Research Agency (FOI)

M. Q. Bao


Remy Leblanc


Koen Buisman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson


EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference

137-140 9337298
9782874870606 (ISBN)

15th European Microwave Integrated Circuits Conference, EuMIC 2020
Utrecht, Netherlands,

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