A 2x6b 8GS/s 17-24GHz I/Q RF-DAC based Transmitter in 22nm FDSOI CMOS
Journal article, 2021
We describe a 2×6 bit Cartesian RF IQ-modulator, implemented on 0.15mm2 in a 22nm FDSOI CMOS technology. Measurements show a 3dB bandwidth of 17–24 GHz and a saturated output power of 10.4dBm with a peak drain efficiency of 15.6%. The IQ-modulator has been verified up to 8GS/s. To the best of our knowledge, this is the highest-frequency CMOS RF IQ-modulator using sub-50%-duty-cycle LO signals, and the highest sample rate reported for >3 bit fully integrated Cartesian IQ-modulators.
RF-DAC
SOI CMOS
IQ-modulator
Author
Victor Åberg
Chalmers, Computer Science and Engineering (Chalmers), Computer Engineering (Chalmers)
Christian Fager
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Lars Svensson
Chalmers, Computer Science and Engineering (Chalmers), Computer Engineering (Chalmers)
IEEE Microwave and Wireless Components Letters
1531-1309 (ISSN) 15581764 (eISSN)
Vol. 31 8 929-932 9456861Areas of Advance
Information and Communication Technology
Infrastructure
Kollberg Laboratory
Subject Categories
Communication Systems
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/LMWC.2021.3089779