A 2x6b 8GS/s 17-24GHz I/Q RF-DAC based Transmitter in 22nm FDSOI CMOS
Artikel i vetenskaplig tidskrift, 2021
We describe a 2×6 bit Cartesian RF IQ-modulator, implemented on 0.15mm2 in a 22nm FDSOI CMOS technology. Measurements show a 3dB bandwidth of 17–24 GHz and a saturated output power of 10.4dBm with a peak drain efficiency of 15.6%. The IQ-modulator has been verified up to 8GS/s. To the best of our knowledge, this is the highest-frequency CMOS RF IQ-modulator using sub-50%-duty-cycle LO signals, and the highest sample rate reported for >3 bit fully integrated Cartesian IQ-modulators.
RF-DAC
SOI CMOS
IQ-modulator
Författare
Victor Åberg
Chalmers, Data- och informationsteknik, Datorteknik
Christian Fager
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Lars Svensson
Chalmers, Data- och informationsteknik, Datorteknik
IEEE Microwave and Wireless Components Letters
1531-1309 (ISSN) 15581764 (eISSN)
Vol. 31 8 929-932 9456861Styrkeområden
Informations- och kommunikationsteknik
Infrastruktur
Kollberglaboratoriet
Ämneskategorier
Kommunikationssystem
Annan elektroteknik och elektronik
DOI
10.1109/LMWC.2021.3089779