Enabling VCSEL-on-silicon nitride photonic integrated circuits with micro-transfer-printing
Journal article, 2021

New wavelength domains have become accessible for photonic integrated circuits (PICs) with the development of silicon nitride PICs. In particular, the visible and near-infrared wavelength range is of interest for a range of sensing and communication applications. The integration of energy-efficient III-V lasers, such as vertical-cavity surface-emitting lasers (VCSELs), is important for expanding the application portfolio of such PICs. However, most of the demonstrated integration approaches are not easily scalable towards low-cost and large-volume production. In this work, we demonstrate the micro-transfer-printing of bottom-emitting VCSELs on silicon nitride PICs as a path to achieve this. The demonstrated 850 nm lasers show waveguide-coupled powers exceeding 100 mu W, with sub-mA lasing thresholds and mW-level power consumption. A single-mode laser with a side-mode suppression ratio over 45 dB and a tuning range of 5 nm is demonstrated. Combining micro-transfer-printing integration with the extended-cavity VCSEL design developed in this work provides the silicon nitride PIC industry with a great tool to integrate energy-efficient VCSELs onto silicon nitride PICs.


Jeroen Goyvaerts

Ghent university

Alexander Grabowski

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Johan Gustavsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Sulakshna Kumari

Ghent university

Andim Stassen

Interuniversitair Micro-Elektronica Centrum (IMEC)

Roel G. Baets

Ghent university

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Gunther Roelkens

Ghent university


2334-2536 (ISSN)

Vol. 8 12 1573-1580

Circuit (PIX) Pilot Line For Life Science Applications (PIX4LIFE)

European Commission (EC) (EC/H2020/688519), 2016-01-01 -- 2018-12-31.

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