A Parameter Extraction Methodology for Graphene Field-Effect-Transistors
Journal article, 2023

Graphene field-effect transistors have now been around for more than a decade and their transfer characteristics extensively used for device characterization. Model parameters like low-field charge-carrier mobility and device contact/series resistance have often been the main interest. However, not until recently have the methods for device characterization themselves been the focus of research publications. In this paper, I report on a structured methodology for extracting and validating the extracted GFET model parameter values based on the physics of field-effect transistors in general and of graphene field-effect transistors in particular. During the extraction process the GFET resistance is divided into two parts, a constant part, and a gate-voltage-dependent part where the constant part often has been believed to represent the series/contact resistance. However, part of it depends on the channel length and contains first-order information about mobility degradation. Finally, I show that the main influence of the quantum capa­citance can be captured by an equivalent oxide thickness replacing the insulator thickness.

model parameter extraction

series/contact resistance

mobility degradation.

graphene field-effect transistors

charge-carrier mobility


Kjell Jeppson

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

IEEE Transactions on Electron Devices

0018-9383 (ISSN) 15579646 (eISSN)

Vol. 70 3 1393-1400

Areas of Advance

Nanoscience and Nanotechnology


Basic sciences

Subject Categories

Other Physics Topics

Other Materials Engineering

Condensed Matter Physics



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