The Schottky barrier transistor in emerging electronic devices
Review article, 2023
source-gated transistors
1D materials
2D materials
thin film transistors
Josephson junctions
Schottky barriers
field effect transistors
Author
Mike Schwarz
Technische Hochschule Mittelhessen
Tom Vethaak
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Technology
Vincent Derycke
University Paris-Saclay
Anais Francheteau
Grenoble Alpes University
Benjamin Iniguez
Rovira i Virgili University
Satender Kataria
RWTH Aachen University
Alexander Kloes
Technische Hochschule Mittelhessen
Francois Lefloch
Grenoble Alpes University
M.C. Lemme
RWTH Aachen University
John P. Snyder
JCap, LLC
Walter M. Weber
Vienna University of Technology
Laurie E. Calvet
Centre national de la recherche scientifique (CNRS)
Nanotechnology
0957-4484 (ISSN) 1361-6528 (eISSN)
Vol. 34 35 352002Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.1088/1361-6528/acd05f
PubMed
37100049