The Schottky barrier transistor in emerging electronic devices
Review article, 2023

This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable field-effect transistors (FETs) for sensors, neuromorphic hardware and security applications. Similarly, judicious use of an SB can be an asset for applications involving Josephson junction FETs.

source-gated transistors

1D materials

2D materials

thin film transistors

Josephson junctions

Schottky barriers

field effect transistors

Author

Mike Schwarz

Technische Hochschule Mittelhessen

Tom Vethaak

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Technology

Vincent Derycke

University Paris-Saclay

Anais Francheteau

Grenoble Alpes University

Benjamin Iniguez

Rovira i Virgili University

Satender Kataria

RWTH Aachen University

Alexander Kloes

Technische Hochschule Mittelhessen

Francois Lefloch

Grenoble Alpes University

M.C. Lemme

RWTH Aachen University

John P. Snyder

JCap, LLC

Walter M. Weber

Vienna University of Technology

Laurie E. Calvet

Centre national de la recherche scientifique (CNRS)

Nanotechnology

0957-4484 (ISSN) 1361-6528 (eISSN)

Vol. 34 35 352002

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1088/1361-6528/acd05f

PubMed

37100049

More information

Latest update

7/25/2023