The Schottky barrier transistor in emerging electronic devices
Reviewartikel, 2023

This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable field-effect transistors (FETs) for sensors, neuromorphic hardware and security applications. Similarly, judicious use of an SB can be an asset for applications involving Josephson junction FETs.

source-gated transistors

1D materials

2D materials

thin film transistors

Josephson junctions

Schottky barriers

field effect transistors

Författare

Mike Schwarz

Technische Hochschule Mittelhessen

Tom Vethaak

Chalmers, Mikroteknologi och nanovetenskap, Kvantteknologi

Vincent Derycke

Université Paris-Saclay

Anais Francheteau

Université Grenoble Alpes

Benjamin Iniguez

Universitat Rovira i Virgili

Satender Kataria

RWTH Aachen University

Alexander Kloes

Technische Hochschule Mittelhessen

Francois Lefloch

Université Grenoble Alpes

M.C. Lemme

RWTH Aachen University

John P. Snyder

JCap, LLC

Walter M. Weber

Technische Universität Wien

Laurie E. Calvet

Centre national de la recherche scientifique (CNRS)

Nanotechnology

0957-4484 (ISSN) 1361-6528 (eISSN)

Vol. 34 35 352002

Ämneskategorier

Annan elektroteknik och elektronik

Den kondenserade materiens fysik

DOI

10.1088/1361-6528/acd05f

PubMed

37100049

Mer information

Senast uppdaterat

2023-07-25