High growth rates and wall decoration of carbon nanotubes grown by plasma-enhanced chemical vapour deposition
Magazine article, 2004

DC plasma-enhanced chemical vapour deposition (PECVD) was used to grow films of aligned carbon nanotubes on a silicon wafer using Fe as catalyst and a C2H2/H2 gas mixture. The films were of high quality and showed an exceptionally high growth rate compared with other plasma growth techniques. For long growth times, the upper parts of the nanotubes developed additional outer graphite flakes. The onset of the ‘tube decoration’ correlates with a decrease in linear growth rate and can be related to the gradient of plasma parameters in the cathode sheath.

carbon nanotubes

Author

Raluca Elena Morjan

Chalmers, Department of Experimental Physics, Atomic Physics

V. Maltsev

Oleg Nerushev

University of Gothenburg

Yiming Yao

Chalmers, Department of Experimental Physics

Lena Falk

Chalmers, Department of Experimental Physics, Microscopy and Microanalysis

Eleanor E B Campbell

University of Gothenburg

Chemical Physics Letters

0009-2614 (ISSN)

Vol. 383/4 385-390

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Physical Sciences

Other Materials Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1016/j.cplett.2003.11.063

More information

Latest update

6/18/2018