High growth rates and wall decoration of carbon nanotubes grown by plasma-enhanced chemical vapour deposition
Artikel i övriga tidskrifter, 2004

DC plasma-enhanced chemical vapour deposition (PECVD) was used to grow films of aligned carbon nanotubes on a silicon wafer using Fe as catalyst and a C2H2/H2 gas mixture. The films were of high quality and showed an exceptionally high growth rate compared with other plasma growth techniques. For long growth times, the upper parts of the nanotubes developed additional outer graphite flakes. The onset of the ‘tube decoration’ correlates with a decrease in linear growth rate and can be related to the gradient of plasma parameters in the cathode sheath.

carbon nanotubes

Författare

Raluca Elena Morjan

Chalmers, Institutionen för experimentell fysik, Atomfysik

V. Maltsev

Oleg Nerushev

Göteborgs universitet

Yiming Yao

Chalmers, Institutionen för experimentell fysik

Lena Falk

Chalmers, Institutionen för experimentell fysik, Mikroskopi och mikroanalys

Eleanor E B Campbell

Göteborgs universitet

Chemical Physics Letters

0009-2614 (ISSN)

Vol. 383/4 385-390

Styrkeområden

Nanovetenskap och nanoteknik

Materialvetenskap

Ämneskategorier

Fysik

Annan materialteknik

Annan elektroteknik och elektronik

DOI

10.1016/j.cplett.2003.11.063

Mer information

Senast uppdaterat

2018-06-18