Numerical modeling of GaN growth by MOCVD on metal substrate
Paper in proceeding, 2024
GaN materials have attracted great interest and have demonstrated remarkable potential in many fields. When growing GaN materials, substrate selection is of great importance. By virtue of their nominally unlimited size, easy removal, and excellent thermal conduction, metal substrates have been suggested as an alternative to the commonly used substrates such as sapphire. GaN growth on metal substrates, however, is still quite rare, and many aspects remain unexplored. This paper uses computational fluid dynamics to perform a three-dimensional numerical simulation of the GaNMOCVD reaction chamber. We investigated the influence of the graphite containers' rotational velocity and the metal matrix's temperature at various locations. When the pressure within the MOCVD chamber remains constant, increasing the graphite tray's rotational velocity enhances the temperature field distribution within the chamber. However, the flow field becomes unstable when the rotation rate exceeds 1000 rpm. Our findings serve as a crucial benchmark for the future parameter optimization of MOCVD growth of GaN on metals.
Computational Fluid Dynamics
GaN materials
MOCVD
Numerical simulation
Metal substrates
Author
Xiubo Fang
Fuzhou University
Kui Pan
Fuzhou University
Tianwen Xia
Fuzhou University
Qinzhong Chen
Fujian Acetron New Materials Co. Ltd
Ke Zhang
Fujian Acetron New Materials Co. Ltd
Qinglong Hou
Fujian Acetron New Materials Co. Ltd
Yongsheng Wu
Ltd.
Hengshan Liu
Ltd.
Jie Sun
Fuzhou University
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Qun Yan
Rich Sense Electronics Technology Co.
Fuzhou University
Tailiang Guo
Fuzhou University
Digest of Technical Papers - SID International Symposium
0097966X (ISSN) 21680159 (eISSN)
Vol. 55 S1 1059-1063
International Conference on Display Technology, 2024
Hefei, China,
Hefei, China,
Subject Categories (SSIF 2011)
Telecommunications
Condensed Matter Physics
DOI
10.1002/sdtp.17276