Numerical modeling of GaN growth by MOCVD on metal substrate
Paper i proceeding, 2024
GaN materials have attracted great interest and have demonstrated remarkable potential in many fields. When growing GaN materials, substrate selection is of great importance. By virtue of their nominally unlimited size, easy removal, and excellent thermal conduction, metal substrates have been suggested as an alternative to the commonly used substrates such as sapphire. GaN growth on metal substrates, however, is still quite rare, and many aspects remain unexplored. This paper uses computational fluid dynamics to perform a three-dimensional numerical simulation of the GaNMOCVD reaction chamber. We investigated the influence of the graphite containers' rotational velocity and the metal matrix's temperature at various locations. When the pressure within the MOCVD chamber remains constant, increasing the graphite tray's rotational velocity enhances the temperature field distribution within the chamber. However, the flow field becomes unstable when the rotation rate exceeds 1000 rpm. Our findings serve as a crucial benchmark for the future parameter optimization of MOCVD growth of GaN on metals.
Metal substrates
MOCVD
Computational Fluid Dynamics
GaN materials
Numerical simulation
Författare
Xiubo Fang
Fuzhou University
Kui Pan
Fuzhou University
Tianwen Xia
Fuzhou University
Qinzhong Chen
Fujian Acetron New Materials Co. Ltd
Ke Zhang
Fujian Acetron New Materials Co. Ltd
Qinglong Hou
Fujian Acetron New Materials Co. Ltd
Yongsheng Wu
Ltd.
Hengshan Liu
Ltd.
Jie Sun
Fuzhou University
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Qun Yan
Fuzhou University
Rich Sense Electronics Technology Inc.
Tailiang Guo
Fuzhou University
Digest of Technical Papers - SID International Symposium
0097966X (ISSN) 21680159 (eISSN)
Vol. 55 S1 1059-1063
International Conference on Display Technology, 2024
Hefei, China,
Hefei, China,
Ämneskategorier
Telekommunikation
Den kondenserade materiens fysik
DOI
10.1002/sdtp.17276